Suzhou Electric Appliance Research Institute
期刊號(hào): CN32-1800/TM| ISSN1007-3175

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智能終端數(shù)據(jù)中心性能優(yōu)化技術(shù)研究

來源:電工電氣發(fā)布時(shí)間:2025-10-28 13:28 瀏覽次數(shù):6

智能終端數(shù)據(jù)中心性能優(yōu)化技術(shù)研究

陸寒熹,蔣長獻(xiàn),李雨晴
(南京林洋電力科技有限公司,江蘇 南京 210019)
 
    摘 要:在大規(guī)模、高頻數(shù)據(jù)采集場景中,如何高效管理和存儲(chǔ)數(shù)據(jù)成為亟待解決的問題。圍繞智能終端數(shù)據(jù)存儲(chǔ)性能優(yōu)化和數(shù)據(jù)安全性保障,從讀寫性能優(yōu)化、數(shù)據(jù)安全性設(shè)計(jì)以及主動(dòng)預(yù)防策略三個(gè)角度提出了優(yōu)化方法。通過引入數(shù)據(jù)分倉、內(nèi)存數(shù)據(jù)庫與緩存技術(shù),并基于寫入放大因子進(jìn)行分析,設(shè)計(jì)了一個(gè)測試系統(tǒng)評估優(yōu)化措施對性能和存儲(chǔ)壽命的影響。實(shí)驗(yàn)結(jié)果表明,優(yōu)化后的數(shù)據(jù)存儲(chǔ)系統(tǒng)顯著提高了數(shù)據(jù)讀寫性能,尤其在高頻訪問和大規(guī)模數(shù)據(jù)場景下表現(xiàn)優(yōu)異,數(shù)據(jù)讀性能提升48.9%,寫性能提升57.6% ;同時(shí)通過優(yōu)化寫入放大因子,eMMC 存儲(chǔ)器寫入數(shù)據(jù)量減少至原來的4.9%,有效延長了存儲(chǔ)設(shè)備壽命,提升了數(shù)據(jù)安全性。
    關(guān)鍵詞: 智能終端;存儲(chǔ)性能;內(nèi)存數(shù)據(jù)庫;數(shù)據(jù)緩存;數(shù)據(jù)安全性;主動(dòng)預(yù)防策略
    中圖分類號(hào):TM73     文獻(xiàn)標(biāo)識(shí)碼:A     文章編號(hào):1007-3175(2025)10-0071-06
 
Research on Performance Optimization Technology of
Intelligent Terminal Data Center
 
LU Han-xi, JIANG Chang-xian, LI Yu-qing
(Nanjing Linyang Electric Power Technology Co., Ltd, Nanjing 210019, China)
 
    Abstract: In large-scale, high-frequency data collection scenarios, how to efficiently manage and store data has become an urgent problem to be solved. Centering on the optimization of data storage performance and data security guarantee for intelligent terminals, optimization methods are proposed from three perspectives: read and write performance optimization, data security design, and proactive prevention strategies. By introducing data partitioning, in-memory database and cache technology, and analyzing based on write amplification factors, a test system was designed to evaluate the impact of optimization measures on performance and storage life. Experimental results show that the optimized data storage system significantly improves data read and write performance, especially in high-frequency access and large-scale data scenarios, with data read performance improved by 48.9% and synchronous write performance improved by 57.6%. At the same time, by optimizing the write amplification factor, the data volume written to the eMMC memory has been reduced to 4.9% of the original, effectively extending the lifespan of the storage device and enhancing data security.
    Key words: intelligent terminal; storage performance; in-memory database; data cache; data security; proactive prevention strategy
 
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